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2N4117A,2N4118A,2N4119A,PN4117,PN4118,PN4119,SST4117,SST4118,SST4119·Å´óÆ÷Linear Systems

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Linear Systems 2N/PN/SST4117ϵÁÐ

¡¡¡¡Õë¶Ô2N4117AÐͺţ¬ËüµÄÔ´¼«±¥ºÍµçÁ÷(IDss)СÓÚ600΢°²£¬¶øÕ¤¼«Ô´¼«Â©µçÁ÷(lgss)ÔÚ2N4117AϵÁÐÖеÍÓÚ1Ƥ°²£¬Õâ±£Ö¤Á˵͹¦ºÄºÍСµÄµç·¼ÓÔØÁ¿¡£

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FEATURES
LOW    POWER                Ioss<600¦ÌA  (2N4117A)
MINIMUM CIRCUIT LOADING    less<1 pA (2N4117A Series)
ABSOLUTE MAXIMUM RATINGS (NOTE 3)
@25¡ã¡æ(unless otherwise noted)
Gate-Source or Gate-Drain Voltage40V
Gate-Current50mA
Total Device Dissipation
(Derate 2mWAC above 25¡æ)
300mW
Storage Temperature Range55¡ãC to+150¡ã¡æ
Lead Temperature
(1/16"from case for 10 seconds)
300¡æ

SYMBOLCHARACTERISTIC411741184119UNITS  CONDITIONS
MINMAXMINMAXMINMAX
BVgssGate Source Breakdown
Voltage
40
40
40
Vg =-1¦ÌA Vos=0
VgsGate-Source Cutoff Voltage0.6-1.8-1-32-6Vos =10V Io=1nA
lossSaturation Drain Current
( NOTE 2)
0.030.600.080.600.200.80mAVos =10V Ves=0
GSsGate Reverse Current
2N4117A,2N4118A,2N4119A
¡ö¡ö-1
-1
-1pAVcs =-20V Vos=0

-2.5
-2.5
-2.5nA150¡æ
PN4117,PN4118,PN4119
SST4117,SST4118,SST4119
¡ö¡ö-10
-10¡ö-10pAVos =-10V Vos=0

-25
-25m¡ö-25nA1509¡æ
gisCommon-Source  Forward
Transconductance
7045080650100700¦ÌSVos =10V Vas=0f=1kHz
gosCommon-Source  Output
Conductance

3
5¡ö10
CiCommon-Source Input
Capacitance (NOTE  4)

3
3¡ö3pFf=1MHz
CrssCommon-Source  Reverse
Transfer Capacitance (NOTE 4)

1.5
1.5
1.5

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JFETµ¥Í¨µÀ·Å´óÆ÷Linear Systems 

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